Product Eescription
Wafer Edge Grinding Machine MET-5600 is designed for compound semiconductor wafer materials with the characteristics of high precision, high-quality grinding surface, accurate crystal orientation positioning and easy operation.machines can process 4-6-8 inches various material wafer, such as Si, Ge,GaAs,InP,SiC,GaN,LN/LT, bonded wafer, glass wafer and others.
Advantage
- Flexible
- ① Can process 4-6-8 inches various material wafer
- ② Easily switch to process different size of wafer
- ③ Process know-how can be set in the software system according to client's process requirements.
- High-precision
- Self-developed spindle precision is up to 1um
- High reliability
- Non-contact centering and measuring method ensure the stable alignment.
- Multiple processing specifications
Wafer Edge Grinding Machine MET-5600 Specification
Model | MET-5600 |
Wafer size | 2-3-4-6 inches, 4-6-8 inches( IF,OF,NOTCH) |
Wafer thickness | 250-1000μm |
Grinding station | Single station, Dual station |
Wafer edge shape | R-shaped, T-shaped, Double R-shaped |
Machine size and weight | L2200*W1500*H2200; 3000KG |
Grinding table X/Y/Z axis spindle accuracy | X.Y.Z spindle accuracy ：±1um |
Chuck surface flatness accuracy ：±3um | |
Chuck spindle θ accuracy ：±1um | |
Grinding wheel spindle θ accuracy：±1um | |
Periphery grinding wheel(OD GROOVE) | φ200mm |
Periphery grinding wheel(OD Periphery ) | φ202mm |
Periphery grinding wheel(ID ) | φ30mm |
Periphery grinding wheel(THICKNESS) | 20mm |
Periphery grinding wheel spindle FRENQUENCY | 4000r/min or 8000r/min(according to client’s requirements) |
Notch spindle FRENQUENCY | 50000-160000r/min |
Centering mechanism | |
Measurement method | Non contact or contact thickness measurement (according to client’s requirements) |
resolving accuracy | 1μm |
Centering accuracy | 20μm |
Cleaning mechanism | |
Cleaning method | Spin cleaning |
Drying method | Dry air |
Transfer unit | |
Loading system | Cassette carrier type |
Numbers of cassette | 4 sets |